发明申请
- 专利标题： SELF-ALIGNED PROCESS FOR NANOTUBE/NANOWIRE FETs
- 专利标题（中）： NANOTUBE / NANOWIRE FET的自对准工艺
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申请号： US13153051申请日： 2011-06-03
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公开(公告)号： US20110256675A1公开(公告)日： 2011-10-20
- 发明人: Phaedon Avouris , Roy A. Carruthers , Jia Chen , Christophe G.M.M. Detavernier , Christian Lavoie , Hon-Sum Philip Wong
- 申请人： Phaedon Avouris , Roy A. Carruthers , Jia Chen , Christophe G.M.M. Detavernier , Christian Lavoie , Hon-Sum Philip Wong
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; B82Y99/00 ; B82Y40/00
摘要：
A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.
公开/授权文献
- US08119466B2 Self-aligned process for nanotube/nanowire FETs 公开/授权日：2012-02-21
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