发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US13090726申请日: 2011-04-20
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公开(公告)号: US20110260259A1公开(公告)日: 2011-10-27
- 发明人: Fujio Masuoka , Shintaro Arai
- 申请人: Fujio Masuoka , Shintaro Arai
- 优先权: JP2010-097735 20100421
- 主分类号: H01L27/092
- IPC分类号: H01L27/092
摘要:
The CMOS inverter coupled circuit is composed of CMOS inverters using SGTs and series-connected in two or more stages. Multiple CMOS inverters share source diffusion layers on a substrate. The CMOS inverters different in the structure of a contact formed on gate wires are alternately arranged next to each other. The CMOS inverters are provided at the minimum intervals. The output terminal of a CMOS inverter is connected to the wiring layer of the next-stage CMOS inverter via the contact of the next-stage CMOS inverter.
公开/授权文献
- US08319288B2 Semiconductor device 公开/授权日:2012-11-27
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