发明申请
- 专利标题： Magnetic Memory Device
- 专利标题（中）： 磁存储器件
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申请号： US13091215申请日： 2011-04-21
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公开(公告)号： US20110260272A1公开(公告)日： 2011-10-27
- 发明人: Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
- 申请人： Jangeun Lee , Sechung Oh , Jeahyoung Lee , Woojin Kim , Junho Jeong , Woo Chang Lim
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2010-0037017 20100421
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.
公开/授权文献
- US08476722B2 Magnetic memory device 公开/授权日：2013-07-02