发明申请
- 专利标题： Back Side Defect Reduction For Back Side Illuminated Image Sensor
- 专利标题（中）： 背面照明图像传感器的背面缺陷减少
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申请号： US12766149申请日： 2010-04-23
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公开(公告)号： US20110260280A1公开(公告)日： 2011-10-27
- 发明人: Chun-Chieh Chuang , Dun-Nian Yaung , Yeur-Luen Tu , Jen-Cheng Liu , Keng-Yu Chou , Chung Chien Wang
- 申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Yeur-Luen Tu , Jen-Cheng Liu , Keng-Yu Chou , Chung Chien Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L31/102
- IPC分类号： H01L31/102 ; H01L31/18 ; H01L31/0352
摘要：
Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a recrystallized silicon layer. The recrystalized silicon layer is formed on the back side of the substrate. The recrystalized silicon layer has different photoluminescence intensity than the substrate.
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