发明申请
- 专利标题： Bipolar Junction Transistor Having a Carrier Trapping Layer
- 专利标题（中）： 具有载流子捕获层的双极结晶体管
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申请号： US12859025申请日： 2010-08-18
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公开(公告)号： US20110260292A1公开(公告)日： 2011-10-27
- 发明人: Chrong-Jung Lin , Ya Chin King , Yi-Hung Tsai
- 申请人： Chrong-Jung Lin , Ya Chin King , Yi-Hung Tsai
- 优先权： TW099112741 20100422
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
A bipolar junction transistor having a carrier trapping layer, comprises a semi-conductor substrate including a well with a first type ions formed thereon; two impurity regions with a second type ions formed opposite with each other over the well; an insulation layer over the well, and edges extend over the second two impurity regions; and a carrier trapping layer formed over the insulation layer.
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