Invention Application
- Patent Title: STACKED SEMICONDUCTOR DEVICE
- Patent Title (中): 堆叠半导体器件
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Application No.: US13026460Application Date: 2011-02-14
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Publication No.: US20110260331A1Publication Date: 2011-10-27
- Inventor: Ho-Cheol LEE
- Applicant: Ho-Cheol LEE
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2010-0038583 20100426
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Provided is a stacked semiconductor device including n stacked chips. Each chip includes “j” corresponding upper and lower electrodes, wherein j is a minimal natural number greater than or equal to n/2, and an identification code generator including a single inverter connecting one of the j first upper electrode to a corresponding one of the j lower electrodes. The upper electrodes receive a previous identification code, rotate the previous identification code by a unit of 1 bit, and invert 1 bit of the rotated previous identification code to generate a current identification code. The current identification code is applied through the j lower electrodes and corresponding TSVs to communicate the current identification code to the upper adjacent chip.
Public/Granted literature
- US08625381B2 Stacked semiconductor device Public/Granted day:2014-01-07
Information query
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