发明申请
- 专利标题: POWER SEMICONDUCTOR DEVICE
- 专利标题(中): 功率半导体器件
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申请号: US13010178申请日: 2011-01-20
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公开(公告)号: US20110260707A1公开(公告)日: 2011-10-27
- 发明人: Motoki IMANISHI , Kenji Sakai , Yoshikazu Tanaka
- 申请人: Motoki IMANISHI , Kenji Sakai , Yoshikazu Tanaka
- 申请人地址: JP Tokyo
- 专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人: MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-099788 20100423
- 主分类号: G05F3/02
- IPC分类号: G05F3/02
摘要:
A power semiconductor device comprises: high side and low side switching elements; high side and low side drive circuits; a bootstrap capacitor supplying a drive voltage to the high side drive circuit and having a first terminal connected to a connection point between the high side switching element and the low side switching element and a second terminal connected to a power supply terminal of the high side drive circuit; a bootstrap diode having an anode connected to a power supply and a cathode connected to the second terminal and supplying a current from the power supply to the second terminal; a floating power supply; and a bootstrap compensation circuit supplying a current from the floating power supply to the second terminal, when the high side drive circuit turns ON the high side switching element and the low side drive circuit turns OFF the low side switching element.
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