发明申请
- 专利标题： Self-Repairing Memristor and Method
- 专利标题（中）： 自我修复忆阻器和方法
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申请号： US13130822申请日： 2009-01-29
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公开(公告)号： US20110261608A1公开(公告)日： 2011-10-27
- 发明人: Julien Borghetti , Alexandre M. Bratkovski , Matthew D. Pickett
- 申请人： Julien Borghetti , Alexandre M. Bratkovski , Matthew D. Pickett
- 国际申请： PCT/US2009/032477 WO 20090129
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L45/00 ; H01L21/02
摘要：
A self-repairing memristor (300) and methods of operating a memristor (10), (310) and repairing a memristor (10), (310) employ thermal annealing (110). The thermal annealing (110) removes a short circuit in an oxide layer (12), (312) of the memristor (10), (310). Thermal annealing (110) includes heating the memristor (10), (310) to a predetermined annealing temperature for a predetermined annealing time period. The memristor (10), (310) returns to an electrically open circuit condition after the short circuit is removed.
公开/授权文献
- US08605484B2 Self-repairing memristor and method 公开/授权日：2013-12-10
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