发明申请
US20110263072A1 FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS 有权
形成氯化铝半导体吸收剂

FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS
摘要:
Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.
公开/授权文献
信息查询
0/0