发明申请
- 专利标题: FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS
- 专利标题(中): 形成氯化铝半导体吸收剂
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申请号: US12765407申请日: 2010-04-22
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公开(公告)号: US20110263072A1公开(公告)日: 2011-10-27
- 发明人: Wen-Chin Lee , Wen-Tsai Yen , Ding-Yuan Chen , Liang-Sheng Yu , Yu-Han Chang
- 申请人: Wen-Chin Lee , Wen-Tsai Yen , Ding-Yuan Chen , Liang-Sheng Yu , Yu-Han Chang
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.
公开/授权文献
- US08546176B2 Forming chalcogenide semiconductor absorbers 公开/授权日:2013-10-01
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