发明申请
- 专利标题： INFRARED SENSING ELEMENT AND INFRARED IMAGING DEVICE
- 专利标题（中）： 红外传感元件和红外成像装置
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申请号： US13095441申请日： 2011-04-27
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公开(公告)号： US20110267473A1公开(公告)日： 2011-11-03
- 发明人: Hidetoshi Kabasawa , Minoru Wakabayashi
- 申请人： Hidetoshi Kabasawa , Minoru Wakabayashi
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-104289 20100428
- 主分类号： H04N5/33
- IPC分类号： H04N5/33 ; H01L29/66 ; B82Y99/00
摘要：
An infrared sensing element is provided and includes a substrate, a supporting electrical insulating layer formed on the substrate; a first electrode formed on the supporting electrical insulating layer, a pyroelectric layer formed on the first electrode, and a second electrode formed on the pyroelectric layer. The pyroelectric layer has a light receiving area of 1×102 to 1×104 μm2, has a thickness of 0.8 to 10 μm, and contains therein a compound expressed as Pb(ZrxTi1-x)O3, where 0.57
公开/授权文献
- US09040912B2 Infrared sensing element and infrared imaging device 公开/授权日：2015-05-26
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