发明申请
- 专利标题： MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- 专利标题（中）： 磁记忆元件和磁性随机存取存储器
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申请号： US13139607申请日： 2009-12-24
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公开(公告)号： US20110267879A1公开(公告)日： 2011-11-03
- 发明人: Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
- 申请人： Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
- 申请人地址： JP Tokyo
- 专利权人： NEC CORPORATION
- 当前专利权人： NEC CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-330507 20081225; JP2009-229644 20091001
- 国际申请： PCT/JP2009/071408 WO 20091224
- 主分类号： G11C11/14
- IPC分类号： G11C11/14
摘要：
A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.
公开/授权文献
- US08687414B2 Magnetic memory element and magnetic random access memory 公开/授权日：2014-04-01
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