发明申请
- 专利标题： METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13083057申请日： 2011-04-08
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公开(公告)号： US20110269302A1公开(公告)日： 2011-11-03
- 发明人: Harish Bhaskaran , Mikael T. Bjoerk , Michel Despont , Bernd W. Gotsmann , Heinz Schmid
- 申请人： Harish Bhaskaran , Mikael T. Bjoerk , Michel Despont , Bernd W. Gotsmann , Heinz Schmid
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 优先权： EP10161347.9 20100428
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
The invention relates to a method of fabricating a semiconductor device. The method includes: providing a semiconductor substrate and locally heating the semiconductor substrate by using a heated tip structure. Locally heating the semiconductor substrate is carried out to locally modify the electrical properties of the semiconductor substrate. The semiconductor substrate can be implanted with dopants, so that locally heating step causes a local activation of the implanted dopants. Furthermore, the semiconductor substrate can be provided with a dopant layer, so that locally heating step causes dopants to diffuse into the semiconductor substrate.
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