发明申请
- 专利标题： RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 电阻记忆体装置及其制造方法
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申请号： US12915495申请日： 2010-10-29
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公开(公告)号： US20110272661A1公开(公告)日： 2011-11-10
- 发明人: Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
- 申请人： Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2010-0043570 20100510
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02
摘要：
Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
公开/授权文献
- US08278138B2 Resistive memory device and method of fabricating the same 公开/授权日：2012-10-02