Invention Application
- Patent Title: RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 电阻记忆体装置及其制造方法
-
Application No.: US12915495Application Date: 2010-10-29
-
Publication No.: US20110272661A1Publication Date: 2011-11-10
- Inventor: Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
- Applicant: Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2010-0043570 20100510
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L21/02
Abstract:
Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
Public/Granted literature
- US08278138B2 Resistive memory device and method of fabricating the same Public/Granted day:2012-10-02
Information query
IPC分类:
