发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13139602申请日： 2010-01-08
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公开(公告)号： US20110272664A1公开(公告)日： 2011-11-10
- 发明人: Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
- 申请人： Munehiro Tada , Toshitsugu Sakamoto , Hiromitsu Hada , Naoki Banno
- 优先权： JP2009-004038 20090109
- 国际申请： PCT/JP2010/050122 WO 20100108
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02
摘要：
A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.
公开/授权文献
- US09406877B2 Semiconductor device and method of manufacturing the same 公开/授权日：2016-08-02
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