发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件和制造半导体器件的方法
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申请号： US13104368申请日： 2011-05-10
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公开(公告)号： US20110272671A1公开(公告)日： 2011-11-10
- 发明人: Joanna Krystyna SKIBA-SZYMANSKA , Andrew James SHIELDS
- 申请人： Joanna Krystyna SKIBA-SZYMANSKA , Andrew James SHIELDS
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： GB1007802.0 20100510
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; H01L21/20
摘要：
A semiconductor device comprising a quantum dot and a plurality of layers, wherein said plurality of layers comprises: a first layer; a stressor layer; and a patterned layer wherein said stressor layer overlies said first layer and said patterned layer overlies said stressor layer; wherein said stressor layer has a substantially different lattice constant to said first layer and said patterned layer and has a pit provided in said layer; said quantum dot lying above said patterned layer aligned with said pit.
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