A semiconductor device has multiple memory cell groups arranged at intersections between multiple word lines and multiple bit lines intersecting the word lines. The memory cell groups each have first and second memory cells connected in series. Each of the first and the second memory cells has a select transistor and a resistive storage device connected in parallel. The gate electrode of the select transistor in the first memory cell is connected with a first gate line, and the gate electrode of the select transistor in the second memory cell is connected to a second gate line. A first circuit block for driving the word lines (word driver group WDBK) is arranged between a second circuit block for driving the first and second gate lines (phase-change-type chain cell control circuit PCCCTL) and multiple memory cell groups (memory cell array MA).