发明申请
US20110273931A1 METHODS OF OPERATING MEMORY CELL HAVING ASYMMETRIC BAND-GAP TUNNEL INSULATOR USING DIRECT TUNNELING
有权
使用直接隧道操作不对称带隙隧道绝缘子的存储器单元的方法
- 专利标题： METHODS OF OPERATING MEMORY CELL HAVING ASYMMETRIC BAND-GAP TUNNEL INSULATOR USING DIRECT TUNNELING
- 专利标题（中）： 使用直接隧道操作不对称带隙隧道绝缘子的存储器单元的方法
-
申请号： US12941458申请日： 2010-11-08
-
公开(公告)号： US20110273931A1公开(公告)日： 2011-11-10
- 发明人: Arup Bhattacharyya
- 申请人： Arup Bhattacharyya
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C11/412
- IPC分类号： G11C11/412
摘要：
Methods of operating dual-gate memory cells having asymmetric band-gap tunnel insulators using direct tunneling. The asymmetric band-gap tunnel insulators allow for low voltage direct tunneling programming and efficient erase with holes and/or electrons, while maintaining high charge blocking barriers and deep carrier trapping sites for good charge retention.
公开/授权文献
信息查询
