发明申请
US20110278657A1 APPARATUS, SYSTEM, AND METHOD FOR CAPACITANCE CHANGE NON-VOLATILE MEMORY DEVICE
审中-公开
装置，系统和电容改变非易失性存储器件的方法
- 专利标题： APPARATUS, SYSTEM, AND METHOD FOR CAPACITANCE CHANGE NON-VOLATILE MEMORY DEVICE
- 专利标题（中）： 装置，系统和电容改变非易失性存储器件的方法
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申请号： US12777866申请日： 2010-05-11
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公开(公告)号： US20110278657A1公开(公告)日： 2011-11-17
- 发明人: Kwan-Yong Lim , Chanro Park , Hokyung Park , Paul Kirsch
- 申请人： Kwan-Yong Lim , Chanro Park , Hokyung Park , Paul Kirsch
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/326 ; H01L21/336
摘要：
An apparatus, system, and method for a capacitance change non-volatile memory device. The apparatus may include a substrate, a source region in the substrate, a drain region in the substrate, a tunnel oxide layer on the substrate substantially between the source region and the drain region, a floating gate layer on the tunnel oxide layer, a resistance changing material layer on the floating gate layer, and a control gate on the resistance changing material layer.
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