发明申请
- 专利标题: METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
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申请号: US13194407申请日: 2011-07-29
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公开(公告)号: US20110281408A1公开(公告)日: 2011-11-17
- 发明人: Jae-Man YOON , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
- 申请人: Jae-Man YOON , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR2008-32816 20080408
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern.
公开/授权文献
- US08409953B2 Method of manufacturing a semiconductor device 公开/授权日:2013-04-02
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