发明申请
- 专利标题: PROCESS FOR THE PREPARATION OF LOW CONTACT RESISTANT CONTACT ON A HIGH TRANSITION TEMPERATURE SUPERCONDUCTORS
- 专利标题(中): 在高转换温度超导体上制备低接触电阻接触的工艺
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申请号: US12842255申请日: 2010-07-23
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公开(公告)号: US20110281734A1公开(公告)日: 2011-11-17
- 发明人: Shrikant EKBOTE , Gursharan Kaur PADAM , Narendra Kumar ARORA , Mukul SHARMA , Ramesh SETHI , Mrinal Kanti BANERJEE
- 申请人: Shrikant EKBOTE , Gursharan Kaur PADAM , Narendra Kumar ARORA , Mukul SHARMA , Ramesh SETHI , Mrinal Kanti BANERJEE
- 专利权人: COUNCIL OF SCIENTIFIC AND INDUSTRIAL RESEARCH
- 当前专利权人: COUNCIL OF SCIENTIFIC AND INDUSTRIAL RESEARCH
- 主分类号: H01L39/02
- IPC分类号: H01L39/02 ; H01L39/24
摘要:
Disclosed is a three layer process for making contact points to a high transition temperature superconductor (HTSC), particularly to (Bi,Pb)2 Sr2 Ca2 CU3019+x with and without silver in the superconductor. The contact structure is a three layer configuration with a perforated silver foil (3) sandwiched between two metal spray gun deposited silver layers (2,5) and subsequent heat treatment in air. The contact has been made on tubes and rods (1). The silver contacts are capable of carrying a continuous current of 200 Amps without adding any substantial heat load to the cryogen used to cool the HTSC. The contact resistance at 4.2K is in the range of 1.5×10(hoch−8) to 8.5″ 10(hoch−8)OHM in zero applied filed.
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