发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
-
申请号: US13191442申请日: 2011-07-26
-
公开(公告)号: US20110283039A1公开(公告)日: 2011-11-17
- 发明人: MOTOYASU TERAO , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
- 申请人: MOTOYASU TERAO , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JP2008-220785 20080829
- 主分类号: G06F12/06
- IPC分类号: G06F12/06
摘要:
To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.
公开/授权文献
- US08132063B2 Semiconductor device 公开/授权日:2012-03-06
信息查询