To extend endurance and reduce bit cost, a method and a storage apparatus are provided, which storage apparatus includes a controller and a semiconductor storage media that includes a first storage device and a second storage device having an upper limit of an erase count of data smaller than the first storage device. Area conversion information includes correspondence of a first address to be specified as a data storage destination and a second address of an area in which data is to be stored. A rewrite frequency of stored data is recorded for each area. The controller selects an area corresponding to the first address, determines whether or not the rewrite frequency of the selected area is equal to or larger than a first threshold value, when the rewrite frequency is equal to or larger than the threshold value, selects an area to be provided by the first storage device, and when the rewrite frequency is smaller than the threshold value, selects an area to be provided by the second storage device and maps the address of the selected area to the first address.