发明申请
US20110284048A1 MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE
审中-公开
多层超级质量好的热电材料和模块
- 专利标题: MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE
- 专利标题(中): 多层超级质量好的热电材料和模块
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申请号: US13073102申请日: 2011-03-28
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公开(公告)号: US20110284048A1公开(公告)日: 2011-11-24
- 发明人: Frank HAASS , Norbert B. ELSNER , Laverne Elsner , Saeid GHAMATY , Daniel KROMMENHOEK
- 申请人: Frank HAASS , Norbert B. ELSNER , Laverne Elsner , Saeid GHAMATY , Daniel KROMMENHOEK
- 申请人地址: US CA San Diego DE Ludwigshafen
- 专利权人: Hi - Z Technology, Inc.,BASF SE
- 当前专利权人: Hi - Z Technology, Inc.,BASF SE
- 当前专利权人地址: US CA San Diego DE Ludwigshafen
- 主分类号: H01L35/12
- IPC分类号: H01L35/12 ; H01L35/34
摘要:
A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150° C. for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 1018 to 1023 cm−3 and in the barrier layers is 1013 to 1018 cm−3.
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