发明申请
US20110284919A1 METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
失效
用于制造III族氮化物半导体层的方法，制造III族氮化物半导体发光器件的方法和III族氮化物半导体发光器件和灯
- 专利标题： METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
- 专利标题（中）： 用于制造III族氮化物半导体层的方法，制造III族氮化物半导体发光器件的方法和III族氮化物半导体发光器件和灯
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申请号： US13205569申请日： 2011-08-08
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公开(公告)号： US20110284919A1公开(公告)日： 2011-11-24
- 发明人: Yasunori YOKOYAMA , Hisayuki MIKI
- 申请人： Yasunori YOKOYAMA , Hisayuki MIKI
- 申请人地址： JP Tokyo
- 专利权人： SHOWA DENKO K.K.
- 当前专利权人： SHOWA DENKO K.K.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-062597 20080312
- 主分类号： H01L33/30
- IPC分类号： H01L33/30 ; H01L33/40
摘要：
A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.
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