发明申请
- 专利标题: FIELD EMISSION DEVICE
- 专利标题(中): 场发射装置
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申请号: US12959592申请日: 2010-12-03
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公开(公告)号: US20110285271A1公开(公告)日: 2011-11-24
- 发明人: PENG LIU , DUAN-LIANG ZHOU , PI-JIN CHEN , ZHAO-FU HU , CAI-LIN GUO , BING-CHU DU , SHOU-SHAN FAN
- 申请人: PENG LIU , DUAN-LIANG ZHOU , PI-JIN CHEN , ZHAO-FU HU , CAI-LIN GUO , BING-CHU DU , SHOU-SHAN FAN
- 申请人地址: TW Tu-Cheng CN Beijing
- 专利权人: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- 当前专利权人: HON HAI PRECISION INDUSTRY CO., LTD.,TSINGHUA UNIVERSITY
- 当前专利权人地址: TW Tu-Cheng CN Beijing
- 优先权: CN201010178218.8 20100520
- 主分类号: H01J9/02
- IPC分类号: H01J9/02
摘要:
A field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.
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