Invention Application
US20110291208A1 ELEMENT STRUCTURE, INERTIA SENSOR, AND ELECTRONIC DEVICE 审中-公开
元件结构,INERTIA传感器和电子设备

  • Patent Title: ELEMENT STRUCTURE, INERTIA SENSOR, AND ELECTRONIC DEVICE
  • Patent Title (中): 元件结构,INERTIA传感器和电子设备
  • Application No.: US13115632
    Application Date: 2011-05-25
  • Publication No.: US20110291208A1
    Publication Date: 2011-12-01
  • Inventor: Shigekazu TAKAGI
  • Applicant: Shigekazu TAKAGI
  • Applicant Address: JP Tokyo
  • Assignee: SEIKO EPSON CORPORATION
  • Current Assignee: SEIKO EPSON CORPORATION
  • Current Assignee Address: JP Tokyo
  • Priority: JP2010-121727 20100527
  • Main IPC: H01L29/84
  • IPC: H01L29/84
ELEMENT STRUCTURE, INERTIA SENSOR, AND ELECTRONIC DEVICE
Abstract:
Manufacturing of an element structure including a capacitor is to be facilitated. An element structure includes a first substrate that has a first support layer and a first movable beam having one end supported side the first support layer and the other end having a void part provided therearound and a second substrate that has a second support layer and a first fixing electrode formed side the second support layer wherein the second substrate is disposed to face above the first substrate, the first movable beam is provided with a first movable electrode and the first fixing electrode and the first movable electrode are disposed to face each other, with a gap therebetween.
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