发明申请
US20110292742A1 Stacked Semiconductor Memory Device, Memory System Including The Same, And Method Of Repairing Defects Of Through Silicon Vias
有权
堆叠的半导体存储器件，包括其的存储器系统以及修复通孔硅缺陷的方法
- 专利标题： Stacked Semiconductor Memory Device, Memory System Including The Same, And Method Of Repairing Defects Of Through Silicon Vias
- 专利标题（中）： 堆叠的半导体存储器件，包括其的存储器系统以及修复通孔硅缺陷的方法
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申请号： US13085776申请日： 2011-04-13
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公开(公告)号： US20110292742A1公开(公告)日： 2011-12-01
- 发明人: Tae-Young Oh , Kwang-il Park , Yun-Seok Yang , Young-Soo Sohn , Si-Hong Kim , Seung-Jun Bae
- 申请人： Tae-Young Oh , Kwang-il Park , Yun-Seok Yang , Young-Soo Sohn , Si-Hong Kim , Seung-Jun Bae
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0051733 20100601
- 主分类号： G11C7/10
- IPC分类号： G11C7/10 ; H01L23/48
摘要：
A stacked semiconductor memory device according to the inventive concepts may include a plurality of memory chips stacked above a processor chip, a plurality of TSVs, and I/O buffers. The TSVs may pass through the memory chips and are connected to the processor chip. I/O buffers may be coupled between all or part of the memory chips and the TSVs and may be selectively activated on the basis of defective states of the TSVs.