发明申请
US20110297215A1 Manufacturing method and apparatus for a copper indium gallium diselenide solar cell
审中-公开
铜铟镓二硒化物太阳能电池的制造方法和装置
- 专利标题： Manufacturing method and apparatus for a copper indium gallium diselenide solar cell
- 专利标题（中）： 铜铟镓二硒化物太阳能电池的制造方法和装置
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申请号： US12802397申请日： 2010-06-04
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公开(公告)号： US20110297215A1公开(公告)日： 2011-12-08
- 发明人: Roger J. Malik
- 申请人： Roger J. Malik
- 专利权人： Roger J. Malik
- 当前专利权人： Roger J. Malik
- 主分类号： H01L31/0264
- IPC分类号： H01L31/0264 ; H01L21/06
摘要：
A method to manufacture Copper Indium Gallium di Selenide (Cu(In,Ga)Se2) thin film solar cell includes evaporating elemental Cu, In, Ga, and Se flux sources onto a heated substrate in a single vacuum system to form a non-intentionally doped Cu(In,Ga)Se2 p-type conductivity layer and exposing the p-type conductivity layer to a thermally evaporated flux of Beryllium (Be) atoms to convert a surface layer of the p-type conductivity layer to an n-type conductivity layer resulting in a buried Cu(In,Ga)Se2 p-n homojunction. Also, the source of Be atoms includes a circular rod of Be having a uniform cross-section that is resistively heated and having its temperature controlled by passing an electrical current through the rod.
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