发明申请
- 专利标题： THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
- 专利标题（中）： 薄膜晶体管，其制造方法和电子器件
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申请号： US13106278申请日： 2011-05-12
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公开(公告)号： US20110297938A1公开(公告)日： 2011-12-08
- 发明人: Noriyuki Kawashima , Hidehisa Murase , Mao Katsuhara
- 申请人： Noriyuki Kawashima , Hidehisa Murase , Mao Katsuhara
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2010-120176 20100526
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336
摘要：
A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.
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