Invention Application
- Patent Title: SELF-ALIGNED CONTACT FOR TRENCH MOSFET
- Patent Title (中): 用于TRENCH MOSFET的自对准接触
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Application No.: US12792025Application Date: 2010-06-02
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Publication No.: US20110298045A1Publication Date: 2011-12-08
- Inventor: Alex KALNITSKY , Hsiao-Chin TUAN , Kuo-Ming WU , Wei Tsung HUANG
- Applicant: Alex KALNITSKY , Hsiao-Chin TUAN , Kuo-Ming WU , Wei Tsung HUANG
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
The process methods and structures mentioned above for creating a trench MOSFET enables self-aligned contacts to be formed to allow decreasing pitch size for trench MOSFET. The self-aligned contacts are formed by etching exposed silicon areas without using lithographical mask and alignment. As a result, the allowance for alignment can be saved and the pitch size can be decreased.
Public/Granted literature
- US08497551B2 Self-aligned contact for trench MOSFET Public/Granted day:2013-07-30
Information query
IPC分类:
