An integrated circuit includes at least one first gate electrode of at least one active transistor. At least one first dummy gate electrode is disposed adjacent to a first side edge of the at least one first gate electrode. At least one second dummy gate electrode is disposed adjacent to a second side edge of the at least one first gate electrode. The second side edge is opposite to the first side edge. At least one guard ring is disposed around the at least one first gate electrode, the at least one first dummy gate electrode, and the at least one second dummy gate electrode. An ion implantation layer of the at least one guard ring substantially touches at least one of the at least one first dummy gate electrode and the at least one second dummy gate electrode.