发明申请
US20110298061A1 STRUCTURE AND METHOD FOR REPLACEMENT GATE MOSFET WITH SELF-ALIGNED CONTACT USING SACRIFICIAL MANDREL DIELECTRIC
有权
具有自对准接触的替代栅极MOSFET的结构和方法使用真正的电介质
- 专利标题： STRUCTURE AND METHOD FOR REPLACEMENT GATE MOSFET WITH SELF-ALIGNED CONTACT USING SACRIFICIAL MANDREL DIELECTRIC
- 专利标题（中）： 具有自对准接触的替代栅极MOSFET的结构和方法使用真正的电介质
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申请号： US12795962申请日： 2010-06-08
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公开(公告)号： US20110298061A1公开(公告)日： 2011-12-08
- 发明人: Shahab Siddiqui , Michael P. Chudzik , Carl J. Radens
- 申请人： Shahab Siddiqui , Michael P. Chudzik , Carl J. Radens
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region.