Invention Application
- Patent Title: LINEAR IMAGE SENSOR IN CMOS TECHNOLOGY
- Patent Title (中): CMOS技术中的线性图像传感器
-
Application No.: US13152333Application Date: 2011-06-03
-
Publication No.: US20110298956A1Publication Date: 2011-12-08
- Inventor: Benoit GIFFARD , Yvon CAZAUX
- Applicant: Benoit GIFFARD , Yvon CAZAUX
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Priority: FR1002360 20100603
- Main IPC: H04N5/335
- IPC: H04N5/335

Abstract:
A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.
Public/Granted literature
- US08817150B2 Linear image sensor in CMOS technology Public/Granted day:2014-08-26
Information query