A non-volatile memory device, precharge voltage control method thereof, and system including the same are provided. The non-volatile memory device includes a bit line connected with a non-volatile memory cell, a precharge voltage generation circuit configured to generate a precharge voltage during a precharge operation, and a control circuit configured to apply the precharge voltage of a second level to the bit line in response to a control signal at a first level during a precharge period in a normal read operation and to apply the precharge voltage of a fourth level to the bit line in response to the control signal at the third level during a precharge period in a verify read or erase operation.