发明申请
US20110300371A1 EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SAME 审中-公开
外源基材及其制造方法

  • 专利标题: EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SAME
  • 专利标题(中): 外源基材及其制造方法
  • 申请号: US13099033
    申请日: 2011-05-02
  • 公开(公告)号: US20110300371A1
    公开(公告)日: 2011-12-08
  • 发明人: Shuichi OmoteKazunari Kurita
  • 申请人: Shuichi OmoteKazunari Kurita
  • 优先权: JP2010-127557 20100603
  • 主分类号: C30B33/02
  • IPC分类号: C30B33/02 B32B5/16
EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SAME
摘要:
[Problem] An object of the present invention is to provide an epitaxial substrate and a method for producing the same capable of suppressing metal contamination and thereby reducing occurrence of white defects of a solid state imaging sensor by maintaining sufficient gettering capability during a device manufacturing process.[Solving Means] The present invention is a method of producing an epitaxial substrate, comprising a step of growing an epitaxial layer on a silicon substrate containing carbon as a dopant to form an epitaxial substrate; and, after the formation of the epitaxial substrate, a step of applying a first thermal treatment and a second thermal treatment to the epitaxial substrate such that a density of oxygen precipitates in a surface layer of the silicon substrate constituting the epitaxial substrate is larger than a density of oxygen precipitates at a center of the silicon substrate in a thickness direction.
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