发明申请
- 专利标题: EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SAME
- 专利标题(中): 外源基材及其制造方法
-
申请号: US13099033申请日: 2011-05-02
-
公开(公告)号: US20110300371A1公开(公告)日: 2011-12-08
- 发明人: Shuichi Omote , Kazunari Kurita
- 申请人: Shuichi Omote , Kazunari Kurita
- 优先权: JP2010-127557 20100603
- 主分类号: C30B33/02
- IPC分类号: C30B33/02 ; B32B5/16
摘要:
[Problem] An object of the present invention is to provide an epitaxial substrate and a method for producing the same capable of suppressing metal contamination and thereby reducing occurrence of white defects of a solid state imaging sensor by maintaining sufficient gettering capability during a device manufacturing process.[Solving Means] The present invention is a method of producing an epitaxial substrate, comprising a step of growing an epitaxial layer on a silicon substrate containing carbon as a dopant to form an epitaxial substrate; and, after the formation of the epitaxial substrate, a step of applying a first thermal treatment and a second thermal treatment to the epitaxial substrate such that a density of oxygen precipitates in a surface layer of the silicon substrate constituting the epitaxial substrate is larger than a density of oxygen precipitates at a center of the silicon substrate in a thickness direction.
信息查询
IPC分类: