发明申请
- 专利标题: ATOMIC LAYER DEPOSITION APPARATUS
- 专利标题(中): 原子层沉积装置
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申请号: US13203381申请日: 2010-02-15
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公开(公告)号: US20110303147A1公开(公告)日: 2011-12-15
- 发明人: Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
- 申请人: Hiroyuki Tachibana , Kazutoshi Murata , Naomasa Miyatake , Yasunari Mori
- 申请人地址: JP Chuo-ku, Tokyo
- 专利权人: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
- 当前专利权人: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
- 当前专利权人地址: JP Chuo-ku, Tokyo
- 优先权: JP2009-056620 20090310
- 国际申请: PCT/JP2010/000911 WO 20100215
- 主分类号: C23C16/44
- IPC分类号: C23C16/44 ; C23C16/455
摘要:
An atomic layer deposition apparatus for forming a thin film on a substrate, including a first container that defines a first inner space, a second container provided inside the first container to define a second inner space, the second container being canister-shaped and including a first opening at one end thereof, a source gas that forms the thin film on the substrate flowing to the second inner space through the first opening, and a pressing member including a gas supply port for supplying the source gas to the second inner space through the first opening, the pressing member being configured to press the second container in a longitudinal direction of the second container so that the second inner space be separated from the first inner space.
公开/授权文献
- US09194043B2 Atomic layer deposition apparatus 公开/授权日:2015-11-24
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