Invention Application
- Patent Title: PLASMA PROCESSING APPARATUS
- Patent Title (中): 等离子体加工设备
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Application No.: US13148179Application Date: 2010-01-14
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Publication No.: US20110303363A1Publication Date: 2011-12-15
- Inventor: Masaki Hirayama , Tadahiro Ohmi
- Applicant: Masaki Hirayama , Tadahiro Ohmi
- Applicant Address: JP Tokyo JP Sendai-shi
- Assignee: TOKYO ELECTRON LIMITED,TOHOKU UNIVERSITY
- Current Assignee: TOKYO ELECTRON LIMITED,TOHOKU UNIVERSITY
- Current Assignee Address: JP Tokyo JP Sendai-shi
- Priority: JP2009-026270 20090206
- International Application: PCT/JP2010/050321 WO 20100114
- Main IPC: C23F1/08
- IPC: C23F1/08 ; H05H1/24

Abstract:
A microwave plasma processing apparatus for plasma-processing a substrate by exciting a gas by the microwave includes a processing container formed of metal, a microwave source for outputting the microwave, a first dielectric member that faces an inner wall of the processing container and for transmitting the microwave output from the microwave source into the processing container, and a second dielectric member that is provided on an inner surface of the processing container and restrains the microwave from propagating along the inner surface of the processing container.
Information query
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