发明申请
US20110303637A1 METHOD OF MANUFACTURING NEAR-FIELD LIGHT GENERATOR INCLUDING WAVEGUIDE AND PLASMON GENERATOR
有权
制造包括波导和等离子发生器在内的近场发光器的方法
- 专利标题: METHOD OF MANUFACTURING NEAR-FIELD LIGHT GENERATOR INCLUDING WAVEGUIDE AND PLASMON GENERATOR
- 专利标题(中): 制造包括波导和等离子发生器在内的近场发光器的方法
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申请号: US12814669申请日: 2010-06-14
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公开(公告)号: US20110303637A1公开(公告)日: 2011-12-15
- 发明人: Hironori ARAKI , Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Kazuo Ishizaki , Takehiro Horinaka
- 申请人: Hironori ARAKI , Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Kazuo Ishizaki , Takehiro Horinaka
- 申请人地址: US CA Milpitas
- 专利权人: HEADWAY TECHNOLOGIES, INC.
- 当前专利权人: HEADWAY TECHNOLOGIES, INC.
- 当前专利权人地址: US CA Milpitas
- 主分类号: B05D5/06
- IPC分类号: B05D5/06 ; G02B6/02
摘要:
A near-field light generator includes: a waveguide; a clad layer having a penetrating opening and disposed on the waveguide; a plasmon generator accommodated in the opening; and a dielectric film interposed between the plasmon generator and each of the waveguide and the clad layer. In a method of manufacturing the near-field light generator, an initial clad layer is initially formed on the waveguide, and then the initial clad layer is taper-etched by RIE to form a recess that does not reach the top surface of the waveguide. Subsequently, the recess is etched by wet etching until the top surface of the waveguide is exposed in part. Next, the dielectric film is formed in the opening, and the plasmon generator is formed on the dielectric film.
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