发明申请
- 专利标题: Group III nitride semiconductor light-emitting element
- 专利标题(中): III族氮化物半导体发光元件
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申请号: US12926837申请日: 2010-12-13
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公开(公告)号: US20110303938A1公开(公告)日: 2011-12-15
- 发明人: Toshiya Uemura , Naoki Arazoe , Yuhei Ikemoto
- 申请人: Toshiya Uemura , Naoki Arazoe , Yuhei Ikemoto
- 申请人地址: JP Kiyosu-shi
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Kiyosu-shi
- 优先权: JPP.2010-136121 20100615
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of the groove is slanted such that a cross-section in an element surface direction is decreased toward the n-type layer from the p-type layer. Fine irregularities are formed on the surface at the side joining to an n-electrode of the n-type layer, except for a region on which the n-electrode is formed, and a translucent insulating film having a refractive index of from 1.5 to 2.3 is formed on the fine irregularities. Light extraction efficiency is improved by reflection of light to the n-type layer side by the groove and prevention of reflection to the n-type layer side by the insulating film.