Invention Application
- Patent Title: COAXIAL TRANSISTOR STRUCTURE
- Patent Title (中): 同轴晶体管结构
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Application No.: US13214784Application Date: 2011-08-22
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Publication No.: US20110303986A1Publication Date: 2011-12-15
- Inventor: Chun-Chu YANG
- Applicant: Chun-Chu YANG
- Priority: TW096139774 20071024
- Main IPC: H01L27/092
- IPC: H01L27/092
Abstract:
The present invention discloses a coaxial transistor formed on a substrate, particularly a coaxial metal-oxide-semiconductor field-effect transistor (CMOSFET). The chips or substrates of the CMOSFETs can be stacked up and connected via through-holes to form a coaxial complementary metal-oxide-semiconductor field-effect transistor (CCMOSFET), which is both full-symmetric and full-complementarily, has a higher integration and is free of the latch-up problem.
Public/Granted literature
- US08395223B2 Coaxial transistor structure Public/Granted day:2013-03-12
Information query
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