发明申请
- 专利标题: ATOMIC LAYER DEPOSITION APPARATUS AND THIN FILM FORMING METHOD
- 专利标题(中): 原子层沉积装置和薄膜形成方法
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申请号: US13203400申请日: 2010-03-03
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公开(公告)号: US20110305836A1公开(公告)日: 2011-12-15
- 发明人: Kazutoshi Murata , Yasunari Mori
- 申请人: Kazutoshi Murata , Yasunari Mori
- 申请人地址: JP Chuo-ku, Tokyo
- 专利权人: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
- 当前专利权人: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
- 当前专利权人地址: JP Chuo-ku, Tokyo
- 优先权: JP2009-056642 20090310
- 国际申请: PCT/JP2010/001462 WO 20100303
- 主分类号: C23C16/458
- IPC分类号: C23C16/458
摘要:
An atomic layer deposition apparatus, which forms a thin film on a substrate, includes a first container that defines a first inner space and includes a substrate carrying-in and carrying-out port and a gas introduction port in different positions, the substrate being carried in and out through the substrate carrying-in and carrying-out port, gas being introduced through the gas introduction port to form the thin film on the substrate, a second container that is provided in the first container to define a second inner space separated from the first inner space, the second container including a first opening, a first moving mechanism that moves the second container in a predetermined direction, and a controller that controls the first moving mechanism such that the second container is moved to a first position where the substrate carrying-in and carrying-out port and the first opening are located opposite each other when the substrate is carried in and out, the controller controlling the first moving mechanism such that the second container is moved to a second position where the gas introduction port and the first opening are located opposite each other when the thin film is formed on the substrate.
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