Invention Application
US20110305891A1 METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT PRODUCTIVITY AND SURFACE QUALITY USING CONTINUOUS CASTING
审中-公开
使用连续铸造制造具有优异生产率和表面质量的硅基材的方法和装置
- Patent Title: METHOD AND APPARATUS FOR MANUFACTURING SILICON SUBSTRATE WITH EXCELLENT PRODUCTIVITY AND SURFACE QUALITY USING CONTINUOUS CASTING
- Patent Title (中): 使用连续铸造制造具有优异生产率和表面质量的硅基材的方法和装置
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Application No.: US13158516Application Date: 2011-06-13
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Publication No.: US20110305891A1Publication Date: 2011-12-15
- Inventor: Bo-Yun JANG , Jin-Seok LEE , Young-Soo AHN
- Applicant: Bo-Yun JANG , Jin-Seok LEE , Young-Soo AHN
- Applicant Address: KR Daejeon
- Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
- Current Assignee Address: KR Daejeon
- Priority: KR10-2010-0055948 20100614; KR10-2011-0056066 20110610
- Main IPC: C01B33/02
- IPC: C01B33/02 ; B32B5/00 ; C01B33/021 ; B28B5/02

Abstract:
The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, and a method for manufacturing a silicon substrate using the same. The apparatus includes a raw silicon feeder, a silicon melting unit melting raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer board transferring the tapped silicon melt, and a silicon substrate forming unit cooling the silicon melt transferred by the transfer board to form a silicon substrate. The molten silicon stored in the molten silicon storage unit has a surface temperature of 1300˜1500° C., the transfer board is preheated to 700˜1400° C., and a transfer time of the silicon substrate after tapping the molten silicon from the molten silicon storage unit is 0.5˜3.5 seconds.
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