发明申请
- 专利标题： THIN FILM TRANSISTOR AND DISPLAY DEVICE
- 专利标题（中）： 薄膜晶体管和显示器件
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申请号： US13155118申请日： 2011-06-07
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公开(公告)号： US20110309876A1公开(公告)日： 2011-12-22
- 发明人: Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai
- 申请人： Yasuhiro Terai , Eri Fukumoto , Toshiaki Arai
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JPJP2010-138375 20100617
- 主分类号： H03K3/01
- IPC分类号： H03K3/01 ; H01L33/16 ; H01L29/04 ; H01L21/336 ; B82Y40/00 ; B82Y99/00
摘要：
A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.
公开/授权文献
- US08486774B2 Thin film transistor and display device 公开/授权日：2013-07-16
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