利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20110310652A1 Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices 有权
可变电阻器件，包括可变电阻器件的半导体器件，以及操作半导体器件的方法

Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices
摘要：
Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state
摘要（中）：

操作包括可变电阻器件的半导体器件的方法，所述方法包括通过向可变电阻器件施加复位脉冲电压将第一数据写入半导体器件，使得可变电阻器件从第一电阻状态切换到第二电阻状态 并且通过向可变电阻器件施加设置的脉冲电压将第二数据写入半导体器件，使得可变电阻器件从第二电阻状态切换到第一电阻状态到第二电阻状态。 复位脉冲电压高于设定脉冲电压，第二电阻状态下的电阻大于第一电阻状态

公开/授权文献
信息查询
Global Dossier
Espacenet
0/0