发明申请
- 专利标题: Field Effect Transistor Device
- 专利标题(中): 场效应晶体管器件
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申请号: US12825791申请日: 2010-06-29
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公开(公告)号: US20110316046A1公开(公告)日: 2011-12-29
- 发明人: Kevin K. Chan , Abhishek Dube , Eric C. Harley , Judson R. Holt , Viorel C. Ontalus , Kathryn T. Schonenberg , Matthew W. Stoker , Keith H. Tabakman , Linda R. Black
- 申请人: Kevin K. Chan , Abhishek Dube , Eric C. Harley , Judson R. Holt , Viorel C. Ontalus , Kathryn T. Schonenberg , Matthew W. Stoker , Keith H. Tabakman , Linda R. Black
- 申请人地址: KY Grand Cayman US NY Armonk
- 专利权人: GLOBALFOUNDRIES INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: GLOBALFOUNDRIES INC.,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: KY Grand Cayman US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
A method for forming a field effect transistor device includes forming a gate stack portion on a substrate, forming a spacer portion on the gates stack portion and a portion of the substrate, removing an exposed portion of the substrate, epitaxially growing a first silicon material on the exposed portion of the substrate, removing a portion of the epitaxially grown first silicon material to expose a second portion of the substrate, and epitaxially growing a second silicon material on the exposed second portion of the substrate and the first silicon material.
公开/授权文献
- US08492234B2 Field effect transistor device 公开/授权日:2013-07-23