发明申请
- 专利标题： POWER SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
- 专利标题（中）： 功率半导体元件及其生产方法
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申请号： US13225675申请日： 2011-09-06
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公开(公告)号： US20110318883A1公开(公告)日： 2011-12-29
- 发明人: Josef Maynollo , Thomas Detzel
- 申请人： Josef Maynollo , Thomas Detzel
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 优先权： DE102004057485.5 20041129
- 主分类号： H01L21/60
- IPC分类号： H01L21/60
摘要：
A power semiconductor component and a method for the production of a power semiconductor component are disclosed. According to one embodiment of the invention, a topmost metallization region that is provided is formed in a manner extended laterally and outside contacts formed, in such a way that, as a result, a protection and sealing material region to be provided is formed, whilst avoiding electrically insulating additional protection and sealing layers that are usually to be provided.