发明申请
US20120001296A1 P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC MATERIAL
有权
P-I-N二极管与电介质材料系列中的二氧化硅结晶相结合
- 专利标题： P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC MATERIAL
- 专利标题（中）： P-I-N二极管与电介质材料系列中的二氧化硅结晶相结合
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申请号： US13229747申请日： 2011-09-11
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公开(公告)号： US20120001296A1公开(公告)日： 2012-01-05
- 发明人: S. Brad Herner
- 申请人： S. Brad Herner
- 主分类号： H01L27/06
- IPC分类号： H01L27/06
摘要：
A vertically oriented p-i-n diode is provided that includes semiconductor material crystallized adjacent a silicide, germanide, or silicide-germanide layer, and a dielectric material arranged electrically in series with the diode. The dielectric material has a dielectric constant greater than 8, and is adjacent a first metallic layer and a second metallic layer. Numerous other aspects are provided.
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