发明申请
- 专利标题： OPENING STRUCTURE
- 专利标题（中）： 开放式结构
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申请号： US13234159申请日： 2011-09-16
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公开(公告)号： US20120001338A1公开(公告)日： 2012-01-05
- 发明人: Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
- 申请人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
An opening structure is disclosed. The opening structure includes: a semiconductor substrate; at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall; a dielectric thin film covering at least a portion of the sidewall of each of the openings; an etch stop layer disposed between the semiconductor substrate and the dielectric layer and extending partially into the openings to isolate the dielectric thin film from the semiconductor substrate; and a metal layer filled in the openings.
公开/授权文献
- US08461649B2 Opening structure for semiconductor device 公开/授权日：2013-06-11
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