发明申请
- 专利标题： CROSS-POINT MEMORY UTILIZING Ru/Si DIODE
- 专利标题（中）： 使用Ru / Si二极管的交点记忆
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申请号： US12833314申请日： 2010-07-09
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公开(公告)号： US20120007037A1公开(公告)日： 2012-01-12
- 发明人: Nirmal Ramaswamy , Kirk D. Prall
- 申请人： Nirmal Ramaswamy , Kirk D. Prall
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
Memory devices utilizing memory cells including a resistive element and a diode coupled in series between two conductors. The diodes include a ruthenium material and a silicon material. The diodes further include an interface on the silicon material of ruthenium or ruthenium silicide. A ruthenium silicide interface may be a polycrystalline ruthenium silicide.
公开/授权文献
- US08395140B2 Cross-point memory utilizing Ru/Si diode 公开/授权日：2013-03-12
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