发明申请
US20120007079A1 Thin Film Field Effect Transistor with Dual Semiconductor Layers
有权
具有双半导体层的薄膜场效应晶体管
- 专利标题: Thin Film Field Effect Transistor with Dual Semiconductor Layers
- 专利标题(中): 具有双半导体层的薄膜场效应晶体管
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申请号: US13239078申请日: 2011-09-21
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公开(公告)号: US20120007079A1公开(公告)日: 2012-01-12
- 发明人: Sanjiv Sambandan , Ana Claudia Arias , Gregory Lewis Whiting
- 申请人: Sanjiv Sambandan , Ana Claudia Arias , Gregory Lewis Whiting
- 申请人地址: US CA Palo Alto
- 专利权人: PALO ALTO RESEARCH CENTER INCORPORATED
- 当前专利权人: PALO ALTO RESEARCH CENTER INCORPORATED
- 当前专利权人地址: US CA Palo Alto
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L29/786
摘要:
A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.